wurtzite

Gallium nitride (GaN) is a hard material with a Wurtzite crystal structure that has substantial impact in the electronics industry.

The XRD analysis revealed seven sharp diffraction peaks in the 29 range from 20[degrees] to 80[degrees]=31.7, 34.3, 36.24, 47.46, 56.68, 63.0 and 67.8, which were found to be consistent with the reported standard Braggs's diffraction of [100], [002], [101], [102], [110], [103] and [112] planes, characteristic of typical wurtzite type polycrystals (38).

The d values of ZnO nanoparticles calculated using the Bragg's relation, d = [lambda]/(2 sin[theta]), were 0.28, 0.26, 0.25, 0.19, 0.16, 0.14, 0.137, and 0.135 nm corresponding to (1 0 0), (0 0 2), (1 0 1), (1 0 2), (1 1 0), (1 0 3), (1 10), and (2 0 1) planes, respectively, which can be indexed to that of hexagonal wurtzite structure of ZnO [37].

The grown of ZnO Wurtzite structure occurs along the c-axis, the energy polar surfaces such as +- (0001) (Fig 6A) which exist as O2- terminated or Zn2+ is relatively high.

ZnO, an II-VI semiconductor with noncentrosymmetric wurtzite crystal structure, a direct band gap of 3.37 eV, and a large excitation binding energy of 60 meV, has been extensively investigated because of its potential applications in piezoelectric devices [1], transistors [2], photodiodes [3], and photocatalysis [4].

Since wurtzite gallium nitride (GaN) has attractive optoelectronic applications, such as light emitting diode and laser diodes [1,3-5], this compound is used in the present work to perform numerical applications.

Study of standard data JCPDS 76-0704 confirmed that the synthesized materials are hexagonal ZnO phase (wurtzite structure).

The XRD spectrum in Figure 6 indicates a polycrystalline structure matching the hexagonal wurtzite structure of ZnO [26].

Farzaneh, "Synthesis of ZnO nanocrystals with hexagonal (Wurtzite) structure in water using microwave irradiation," Journal of Sciences, Islamic Republic of Iran, vol.